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王兴晟
个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
在职信息：在职
所在单位：集成电路学院
学历：研究生(博士)毕业
学位：哲学博士学位
毕业院校：格拉斯哥大学
学科：微电子学与固体电子学
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Chengxu Wang,Hao Yu,Yichen Wang,Zichong Zhang,Xiangshui Miao.Xingsheng Wang.Modelling and physical mechanism analysis of the effect of polycrystalline-ferroelectric gate on FE-FinFET.[J].SCIENCE CHINA Information Sciences,2023,(5):159403
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Haowen Luo,Ruihan Li,Xiangshui Miao.Xingsheng Wang.A Comprehensive Study of Device Variability of Sub-5nm Nanosheet Transistors and Interplay with Quantum Confinement Variation.[J].SCIENCE CHINA Information Sciences,2023,(2):129402
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Ruihan Li,Haowen Luo,Yichen Wang,Zhengwu Yuan,Asen Asenov,Xiangshui Miao.Xingsheng Wang.Improved compact model extraction of statistical variability in 5 nm nanosheet transistors and applied to SRAM simulations.[J].Semiconductor Science and Technology,2022,(9):095010
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Fan Yang,Yi Wang,Chengxu Wang,Yinghao Ma,Xiangshui Miao.Xingsheng Wang.High-Entropy True Random Number Generator based on Memristor Reset Switching.[J].IEEE Electron Device Letters,2022,(9):1459-1462
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Chengxu Wang,Ge-Qi Mao,Menghua Huang,Enming Huang,Zichong Zhang,Junhui Yuan,Weiming Cheng,Kan-Hao Xue,Xiangshui Miao.Xingsheng Wang.HfOx/AlOy Superlattice-Like Memristive Synapse.[J].Advanced Science,2022,2201446
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Yujie Song,Qiwen Wu,Fan Yang,Chengxu Wang,Meiqing Wang,Xiangshui Miao.Xingsheng Wang.Reconfigurable and Efficient Implementation of 16 Boolean Logics and Full-Adder Functions with Memristor Crossbar for Beyond von Neumann In-Memory Computing.[J].Advanced Science,2022,(15):2200036
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Yujie Song,Qiwen Wu,Chengxu Wang,Xiangshui Miao.Xingsheng Wang.Two Memristors-Based XOR Logic Demonstrated With Encryption/Decryption.[J].IEEE Electron Device Letters,2021,(9):1398-1401
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Yujie Song,Qiwen Wu,Chengxu Wang,Shuo Du,张连斌,缪向水.王兴晟.High switching uniformity in HfOx-based memristors by adding polydopamine-derived Ag nanoparticles on the electrode.[J].Applied Physics Letters,2021,(22):223501
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Chengxu Wang, Jibo Wu, Hao Yu, Genquan Han, Xiangshui Miao, Xingsheng Wang.Xingsheng Wang.Effects of Temperature on the Performance of Hf0.5Zr0.5O2-Based Negative Capacitance FETs.[J].IEEE Electron Device Letters,2020,(11):1625-1628
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Tao Wu, Haowen Luo, Xingsheng Wang,Asen Asenov, Xiangshui Miao.Xingsheng Wang.A Predictive 3-D Source/Drain Resistance Compact Model and the Impact on 7 nm and Scaled FinFETs.[J].IEEE Transacations on Electron Devices,2020,(6):2255-2262
