王兴晟
论文成果
当前位置: Chinese homepage >> 科学研究 >> 论文成果- Ruihan Li,Haowen Luo,Yichen Wang,Zhengwu Yuan,Asen Asenov,Xiangshui Miao.Xingsheng Wang.Improved compact model extraction of statistical variability in 5 nm nanosheet transistors and applied to SRAM simulations.[J].Semiconductor Science and Technology,2022,(9):095010
- Fan Yang,Yi Wang,Chengxu Wang,Yinghao Ma,Xiangshui Miao.Xingsheng Wang.High-Entropy True Random Number Generator based on Memristor Reset Switching.[J].IEEE Electron Device Letters,2022,(9):1459-1462
- Chengxu Wang,Ge-Qi Mao,Menghua Huang,Enming Huang,Zichong Zhang,Junhui Yuan,Weiming Cheng,Kan-Hao Xue,Xiangshui Miao.Xingsheng Wang.HfOx/AlOy Superlattice-Like Memristive Synapse.[J].Advanced Science,2022,2201446
- Yujie Song,Qiwen Wu,Fan Yang,Chengxu Wang,Meiqing Wang,Xiangshui Miao.Xingsheng Wang.Reconfigurable and Efficient Implementation of 16 Boolean Logics and Full-Adder Functions with Memristor Crossbar for Beyond von Neumann In-Memory Computing.[J].Advanced Science,2022,(15):2200036
- Yujie Song,Qiwen Wu,Chengxu Wang,Xiangshui Miao.Xingsheng Wang.Two Memristors-Based XOR Logic Demonstrated With Encryption/Decryption.[J].IEEE Electron Device Letters,2021,(9):1398-1401
- Yujie Song,Qiwen Wu,Chengxu Wang,Shuo Du,张连斌,缪向水.王兴晟.High switching uniformity in HfOx-based memristors by adding polydopamine-derived Ag nanoparticles on the electrode.[J].Applied Physics Letters,2021,(22):223501
- Chengxu Wang, Jibo Wu, Hao Yu, Genquan Han, Xiangshui Miao, Xingsheng Wang.Xingsheng Wang.Effects of Temperature on the Performance of Hf0.5Zr0.5O2-Based Negative Capacitance FETs.[J].IEEE Electron Device Letters,2020,(11):1625-1628
- Tao Wu, Haowen Luo, Xingsheng Wang,Asen Asenov, Xiangshui Miao.Xingsheng Wang.A Predictive 3-D Source/Drain Resistance Compact Model and the Impact on 7 nm and Scaled FinFETs.[J].IEEE Transacations on Electron Devices,2020,(6):2255-2262
- Xiao-Di Huang, Yi Li , Hao-Yang Li, Kan-Hao Xue , Xingsheng Wang ,Xiang-Shui Miao.Yi Li.Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor.[J].IEEE Electron Device Letters,2020,(4):549-552
- Qiang Huo, Zhenhua, Wu, Weixing Huang, Geyu Tang, Jiaxin Yao, Yongpan Liu, Xiaojin Zhao, Ling Li, Ming Liu.Zhenhua Wu, Xingsheng Wang, Feng Zhang.A Novel General Compact Model Approach for 7-nm Technology Node Circuit Optimization From Device Perspective and Beyond.[J].Journal of the Electron Device Society,2020,(1):295-301